CSD25202W15T
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| Manufacturer | Texas Instruments |
| Package | 9-UFBGA, DSBGA |
| Datasheet | CSD25202W15 |
| Description | P-Channel 20V 4A (Ta) 500mW (Ta) Surface Mount 9-DSBGA |
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مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD25202W15T
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 500mW
- Total Gate Charge (Qg@Vgs) 7.5nC@4.5V
- Input Capacitance (Ciss@Vds) 1010pF@10V
- Continuous Drain Current (Id) 4A
- Gate Threshold Voltage (Vgs(th)@Id) 1.05V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 26mΩ@2A,4.5V
- Package BGA-9
- Manufacturer Texas Instruments
- Power Dissipation (Max) 500mW (Ta)
- Drain to Source Voltage (Vdss) 20V
- Rds On (Max) @ Id, Vgs 26mOhm @ 2A, 4.5V
- Vgs (Max) -6V
- FET Type P-Channel
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- FET Feature -
- Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 10V
- Packaging Cut Tape (CT)
- Package / Case 9-UFBGA, DSBGA
- Part Status Active
- Series NexFET™
- Vgs(th) (Max) @ Id 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
- Supplier Device Package 9-DSBGA
- Mounting Type Surface Mount
- Base Part Number CSD25202
- detail P-Channel 20V 4A (Ta) 500mW (Ta) Surface Mount 9-DSBGA
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