STB10N65K3
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| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | STx(x)10N65K3 |
| Description | N-Channel 650V 10A (Tc) 150W (Tc) Surface Mount D2PAK |
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تغییرات قیمت
مشخصات
- Manufacturer STMicroelectronics
- Series SuperMESH3™
- Packaging Cut Tape (CT)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1Ohm @ 3.6A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 25V
- FET Feature -
- Power Dissipation (Max) 150W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number STB10N6
- detail N-Channel 650V 10A (Tc) 150W (Tc) Surface Mount D2PAK
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