STF15N60M2-EP
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 Full Pack |
| Datasheet | STF(I)15N60M2-EP |
| Description | N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP |
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مشخصات STF15N60M2-EP
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STF15N60M2-EP
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 25W
- Total Gate Charge (Qg@Vgs) 17nC@10V
- Drain Source Voltage (Vdss) 600V
- Input Capacitance (Ciss@Vds) 590pF@100V
- Continuous Drain Current (Id) 11A
- Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 1.1pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 340mΩ@10V,5.5A
- Package TO-220
- Manufacturer STMicroelectronics
- Series MDmesh™ M2-EP
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 378mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 590pF @ 100V
- FET Feature -
- Power Dissipation (Max) 25W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP
- Package / Case TO-220-3 Full Pack
- Base Part Number STF15
- detail N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP
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