CSD16322Q5
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| Manufacturer | Texas Instruments |
| Package | 8-PowerTDFN |
| Datasheet | CSD16322Q5 |
| Description | N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD16322Q5
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 3.1W
- Total Gate Charge (Qg@Vgs) 9.7nC@4.5V
- Drain Source Voltage (Vdss) 25V
- Input Capacitance (Ciss@Vds) 1365pF@12.5V
- Continuous Drain Current (Id) 21A;97A
- Gate Threshold Voltage (Vgs(th)@Id) 1.4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 5mΩ@20A,8V
- Package VSON-8-CLIP
- Manufacturer Texas Instruments
- FET Type N-Channel
- Vgs(th) (Max) @ Id 1.4V @ 250µA
- Base Part Number CSD1632
- Supplier Device Package 8-VSON-CLIP (5x6)
- Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
- Input Capacitance (Ciss) (Max) @ Vds 1365pF @ 12.5V
- FET Feature -
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 97A (Tc)
- Mounting Type Surface Mount
- Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 8V
- Packaging Cut Tape (CT)
- Series NexFET™
- Package / Case 8-PowerTDFN
- Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
- Vgs (Max) +10V, -8V
- Part Status Active
- Power Dissipation (Max) 3.1W (Ta)
- Technology MOSFET (Metal Oxide)
- detail N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
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