STU3N80K5
در 0 فروشگاه
قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | STMicroelectronics |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | STx3N80K5 |
| Description | N-Channel 800V 2.5A (Tc) 60W (Tc) Through Hole I-PAK |
sellers STU3N80K5
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STU3N80K5
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 60W
- Total Gate Charge (Qg@Vgs) 9.5nC@10V
- Drain Source Voltage (Vdss) 800V
- Input Capacitance (Ciss@Vds) 130pF@100V
- Continuous Drain Current (Id) 2.5A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@100uA
- Reverse Transfer Capacitance (Crss@Vds) 0.6pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.8Ω@10V,1A
- Package TO-251
- Manufacturer STMicroelectronics
- Series SuperMESH5™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
- Vgs (Max) 30V
- Input Capacitance (Ciss) (Max) @ Vds 130pF @ 100V
- FET Feature -
- Power Dissipation (Max) 60W (Tc)
- Mounting Type Through Hole
- Supplier Device Package I-PAK
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number STU3N
- detail N-Channel 800V 2.5A (Tc) 60W (Tc) Through Hole I-PAK
فروشنده ها
فروشگاهی یافت نشد