STB10NK60Z-1
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| Manufacturer | STMicroelectronics |
| Package | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Datasheet | STx10NK60Z |
| Description | N-Channel 600V 10A (Tc) 115W (Tc) Through Hole I2PAK |
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مشخصات STB10NK60Z-1
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tube
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 25V
- FET Feature -
- Power Dissipation (Max) 115W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I2PAK
- Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number STB10N
- detail N-Channel 600V 10A (Tc) 115W (Tc) Through Hole I2PAK
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