STP6N80K5
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | ST(B,D,I,P)6N80K5 |
| Description | N-Channel 800V 4.5A (Tc) 85W (Tc) Through Hole TO-220 |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP6N80K5
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 85W
- Total Gate Charge (Qg@Vgs) 7.5nC@10V
- Drain Source Voltage (Vdss) 800V
- Input Capacitance (Ciss@Vds) 255pF@100V
- Continuous Drain Current (Id) 4.5A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@100uA
- Reverse Transfer Capacitance (Crss@Vds) 0.7pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.3Ω@10V,2A
- Package TO-220
- Manufacturer STMicroelectronics
- Series SuperMESH5™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
- Vgs (Max) 30V
- Input Capacitance (Ciss) (Max) @ Vds 255pF @ 100V
- FET Feature -
- Power Dissipation (Max) 85W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Package / Case TO-220-3
- Base Part Number STP6N
- detail N-Channel 800V 4.5A (Tc) 85W (Tc) Through Hole TO-220
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