STP26N60M2

STP26N60M2

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مشخصات فنی:
Manufacturer STMicroelectronics
Package TO-220-3
Datasheet STx26N60M2
Description N-Channel 600V 20A (Tc) 169W (Tc) Through Hole TO-220

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet STMicroelectronics STP26N60M2
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 169W
  • Total Gate Charge (Qg@Vgs) 34nC@10V
  • Drain Source Voltage (Vdss) 600V
  • Input Capacitance (Ciss@Vds) 1.36nF@100V
  • Continuous Drain Current (Id) 20A
  • Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds) 2pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 140mΩ@10V,10A
  • Package TO-220
  • Manufacturer STMicroelectronics
  • Series MDmesh™ M2
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600V
  • Current - Continuous Drain (Id) @ 25°C 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs -
  • Vgs(th) (Max) @ Id -
  • Vgs (Max) -
  • FET Feature -
  • Power Dissipation (Max) 169W (Tc)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220
  • Package / Case TO-220-3
  • Base Part Number STP26N
  • detail N-Channel 600V 20A (Tc) 169W (Tc) Through Hole TO-220

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