STW36NM60ND
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| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | STW36NM60N ~ |
| Description | N-Channel 600V 29A (Tc) 210W (Tc) Through Hole TO-247-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STW36NM60ND
- Power Dissipation (Pd) 190W
- Total Gate Charge (Qg@Vgs) 80.4nC@10V
- Input Capacitance (Ciss@Vds) 2785pF@50V
- Continuous Drain Current (Id) 29A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 110mΩ@14.5A,10V
- Package TO-247-3
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 105mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 83.6nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V
- FET Feature -
- Power Dissipation (Max) 210W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Package / Case TO-247-3
- Base Part Number STW36N
- detail N-Channel 600V 29A (Tc) 210W (Tc) Through Hole TO-247-3
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