STQ3NK50ZR-AP
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| Manufacturer | STMicroelectronics |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | ST(D,Q)3NK50Z(R-AP,-1) |
| Description | N-Channel 500V 500mA (Tc) 3W (Tc) Through Hole TO-92-3 |
sellers STQ3NK50ZR-AP
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مشخصات
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tape & Box (TB)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 3.3Ohm @ 1.15A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number STQ3
- detail N-Channel 500V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
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