CSD18511Q5AT
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| Manufacturer | Texas Instruments |
| Package | 8-PowerTDFN |
| Datasheet | CSD18511Q5A |
| Description | N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD18511Q5AT
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 104W
- Total Gate Charge (Qg@Vgs) 63nC@10V
- Drain Source Voltage (Vdss) 40V
- Input Capacitance (Ciss@Vds) 5850pF@10V
- Continuous Drain Current (Id) 159A
- Gate Threshold Voltage (Vgs(th)@Id) 2.45V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 3.5mΩ@24A,4.5V
- Package VSONP-8
- Manufacturer Texas Instruments
- FET Type N-Channel
- Vgs(th) (Max) @ Id 2.45V @ 250µA
- Base Part Number CSD1851
- Supplier Device Package 8-VSONP (5x6)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5850pF @ 10V
- FET Feature -
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 159A (Tc)
- Mounting Type Surface Mount
- Rds On (Max) @ Id, Vgs 3.5mOhm @ 24A, 4.5V
- Packaging Cut Tape (CT)
- Series NexFET™
- Package / Case 8-PowerTDFN
- Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
- Vgs (Max) ±20V
- Part Status Active
- Power Dissipation (Max) 104W (Tc)
- Technology MOSFET (Metal Oxide)
- detail N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6)
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