CSD18510KCS

CSD18510KCS

CSD18510KCS

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Manufacturer Texas Instruments
Package TO-220-3
Datasheet CSD18510KCS Datasheet
Description N-Channel 40V 200A (Ta) 250W (Ta) Through Hole TO-220-3

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Texas Instruments CSD18510KCS
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 250W
  • Total Gate Charge (Qg@Vgs) 75nC@4.5V
  • Drain Source Voltage (Vdss) 40V
  • Input Capacitance (Ciss@Vds) 11400pF@20V
  • Continuous Drain Current (Id) 200A
  • Gate Threshold Voltage (Vgs(th)@Id) 2.3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 1.7mΩ@100A,10V
  • Package TO-220
  • Manufacturer Texas Instruments
  • FET Type N-Channel
  • Vgs(th) (Max) @ Id 2.3V @ 250µA
  • Base Part Number CSD1851
  • Supplier Device Package TO-220-3
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 11400pF @ 20V
  • FET Feature -
  • Drain to Source Voltage (Vdss) 40V
  • Current - Continuous Drain (Id) @ 25°C 200A (Ta)
  • Mounting Type Through Hole
  • Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
  • Packaging Tube
  • Series NexFET™
  • Package / Case TO-220-3
  • Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V
  • Vgs (Max) ±20V
  • Part Status Active
  • Power Dissipation (Max) 250W (Ta)
  • Technology MOSFET (Metal Oxide)
  • detail N-Channel 40V 200A (Ta) 250W (Ta) Through Hole TO-220-3

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