STP160N4LF6
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STP160N4LF6 |
| Description | N-Channel 40V 120A (Tc) 150W (Tc) Through Hole TO-220 |
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تغییرات قیمت
مشخصات
- Manufacturer STMicroelectronics
- Series DeepGATE™, STripFET™ VI
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 2.9mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 20V
- FET Feature -
- Power Dissipation (Max) 150W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Package / Case TO-220-3
- Base Part Number STP160
- detail N-Channel 40V 120A (Tc) 150W (Tc) Through Hole TO-220
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