VN2210N2
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| Manufacturer | Microchip Tech |
| Package | TO-205AD, TO-39-3 Metal Can |
| Datasheet | VN2210 Datasheet |
| Description | N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Microchip Tech VN2210N2
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 360mW
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 500pF@25V
- Continuous Drain Current (Id) 1.7A
- Gate Threshold Voltage (Vgs(th)@Id) 2.4V@10mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 350mΩ@4A,10V
- Package TO-39
- Manufacturer Microchip Tech
- Series -
- Packaging Bulk
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 1.7A (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 350mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id 2.4V @ 10mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
- FET Feature -
- Power Dissipation (Max) 360mW (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-39
- Package / Case TO-205AD, TO-39-3 Metal Can
- detail N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39
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