APT11N80BC3G
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| Manufacturer | Microchip Technology |
| Package | TO-247-3 |
| Datasheet | Power Products Catalog |
| Description | N-Channel 800V 11A (Tc) 156W (Tc) Through Hole TO-247 [B] |
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مشخصات APT11N80BC3G
- Manufacturer Microchip Technology
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id 3.9V @ 680µA
- Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 25V
- FET Feature -
- Power Dissipation (Max) 156W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247 [B]
- Package / Case TO-247-3
- detail N-Channel 800V 11A (Tc) 156W (Tc) Through Hole TO-247 [B]
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