TP0606N3-G
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| Manufacturer | Microchip Tech |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | TP0606 |
| Description | P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3 |
فروشنده های TP0606N3-G
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مشخصات TP0606N3-G
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Microchip Tech TP0606N3-G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1W
- Input Capacitance (Ciss@Vds) 150pF@25V
- Continuous Drain Current (Id) 320mA
- Gate Threshold Voltage (Vgs(th)@Id) 2.4V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 3.5Ω@750mA,10V
- Package TO-92-3
- Manufacturer Microchip Tech
- Series -
- Packaging Bulk
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 320mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 3.5Ohm @ 750mA, 10V
- Vgs(th) (Max) @ Id 2.4V @ 1mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
- FET Feature -
- Power Dissipation (Max) 1W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- detail P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3
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