DN2535N3-G-P003
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| Manufacturer | Microchip Tech |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | DN2535 |
| Description | N-Channel 350V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226) |
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مشخصات DN2535N3-G-P003
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Microchip Tech DN2535N3-G-P003
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1W
- Drain Source Voltage (Vdss) 350V
- Input Capacitance (Ciss@Vds) 300pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 25Ω@120mA,0V
- Package TO-92-3
- Manufacturer Microchip Tech
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 350V
- Current - Continuous Drain (Id) @ 25°C 120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 0V
- Rds On (Max) @ Id, Vgs 25Ohm @ 120mA, 0V
- Vgs(th) (Max) @ Id -
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
- FET Feature Depletion Mode
- Power Dissipation (Max) 1W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-92 (TO-226)
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- detail N-Channel 350V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226)
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