TN0610N3-G-P003
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| Manufacturer | Microchip Tech |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | TN0610 |
| Description | N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-92-3 |
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مشخصات TN0610N3-G-P003
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Microchip Tech TN0610N3-G-P003
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1W
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 150pF@25V
- Continuous Drain Current (Id) 500mA
- Gate Threshold Voltage (Vgs(th)@Id) 2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.5Ω@750mA,10V
- Package TO-92
- Manufacturer Microchip Tech
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 500mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 3V, 10V
- Rds On (Max) @ Id, Vgs 1.5Ohm @ 750mA, 10V
- Vgs(th) (Max) @ Id 2V @ 1mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
- FET Feature -
- Power Dissipation (Max) 1W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- detail N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-92-3
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