BS108/01,126
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| Manufacturer | NXP USA Inc. |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | BS108 |
| Description | N-Channel 200V 300mA (Ta) 1W (Ta) Through Hole TO-92-3 |
فروشنده های BS108/01,126
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مشخصات BS108/01,126
- Manufacturer NXP USA Inc.
- Series -
- Packaging Tape & Box (TB)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.8V
- Rds On (Max) @ Id, Vgs 5Ohm @ 100mA, 2.8V
- Vgs(th) (Max) @ Id 1.8V @ 1mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
- FET Feature -
- Power Dissipation (Max) 1W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number BS10
- detail N-Channel 200V 300mA (Ta) 1W (Ta) Through Hole TO-92-3
فروشنده های BS108/01,126
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