BST72A,112
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| Manufacturer | NXP USA Inc. |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | BST72A |
| Description | N-Channel 100V 190mA (Ta) 830mW (Ta) Through Hole TO-92-3 |
sellers BST72A,112
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مشخصات
- Manufacturer NXP USA Inc.
- Series TrenchMOS™
- Packaging Bulk
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Rds On (Max) @ Id, Vgs 10Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id 3.5V @ 1mA
- Vgs (Max) 20V
- Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
- FET Feature -
- Power Dissipation (Max) 830mW (Ta)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number BST7
- detail N-Channel 100V 190mA (Ta) 830mW (Ta) Through Hole TO-92-3
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