PDTC144ES,126
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| Manufacturer | NXP USA Inc. |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | PDTC144E Series |
| Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
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مشخصات
- Manufacturer NXP USA Inc.
- Series -
- Packaging Tape & Box (TB)
- Part Status Obsolete
- Transistor Type NPN - Pre-Biased
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Resistor - Base (R1) 47 kOhms
- Resistor - Emitter Base (R2) 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) 1µA
- Power - Max 500mW
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number PDTC14
- detail Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
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