BUT11AI,127
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| Manufacturer | NXP USA Inc. |
| Package | TO-220-3 |
| Datasheet | BUT11AI |
| Description | Bipolar (BJT) Transistor NPN 450V 5A 100W Through Hole TO-220AB |
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مشخصات BUT11AI,127
- Manufacturer NXP USA Inc.
- Series -
- Packaging Tube
- Part Status Obsolete
- Transistor Type NPN
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 450V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 330mA, 2.5A
- Current - Collector Cutoff (Max) 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA, 5V
- Power - Max 100W
- Frequency - Transition -
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number BUT11
- detail Bipolar (BJT) Transistor NPN 450V 5A 100W Through Hole TO-220AB
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