IPP100N12S3-05
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IPP100N12S3-05 |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPP100N12S3-05
- Power Dissipation (Pd) 300W
- Drain Source Voltage (Vdss) 120V
- Continuous Drain Current (Id) 100A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@240uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 5.1mΩ@10V,100A
- Package TO-220-3
- Manufacturer Infineon Technologies
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