فروشنده های 2N5551-B
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مشخصات 2N5551-B
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Foshan Blue Rocket Elec 2N5551-B
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 625mW
- Transition Frequency (fT) 110MHz
- DC Current Gain (hFE@Ic,Vce) 100@10mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 150mV@10mA,1mA
- Package TO-92L
- Manufacturer Foshan Blue Rocket Elec
فروشنده های 2N5551-B
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