فروشنده های BSZ088N03LS G
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مشخصات BSZ088N03LS G
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies BSZ088N03LS G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 35W
- Total Gate Charge (Qg@Vgs) 7.5nC@0~4.5V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 1.3nF@15V
- Continuous Drain Current (Id) 50A
- Gate Threshold Voltage (Vgs(th)@Id) 2.2V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 25pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 7.3mΩ@10V,20A
- Package DFN-8(3.3x3.3)
- Manufacturer Infineon Technologies
فروشنده های BSZ088N03LS G
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