BCW33,215
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| Manufacturer | Nexperia |
| Package | --- |
| Datasheet | BCW33,215 |
| Description | --- |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Nexperia BCW33,215
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 250mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 32V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 210mV@50mA,2.5mA
- Package SOT-23(TO-236)
- Manufacturer Nexperia