2SJ360-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | 2SJ360-VB |
| Description | --- |
sellers 2SJ360-VB
مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec 2SJ360-VB
- Power Dissipation (Pd) 2.1W
- Drain Source Voltage (Vdss) 60V
- Continuous Drain Current (Id) 4.8A
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 58mΩ@10V,3A
- Package SOT-89
- Manufacturer VBsemi Elec