STP10NK80Z
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| Manufacturer | STMicroelectronics |
| Package | --- |
| Datasheet | STP10NK80Z |
| Description | --- |
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Specifications STP10NK80Z
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP10NK80Z
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 190W
- Total Gate Charge (Qg@Vgs) 72nC@10V
- Drain Source Voltage (Vdss) 800V
- Input Capacitance (Ciss@Vds) 2180pF@25V
- Continuous Drain Current (Id) 9A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 900mΩ@10V,4.5A
- Package TO-220
- Manufacturer STMicroelectronics
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