sellers IPI076N12N3 G
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مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPI076N12N3 G
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 188W
- Total Gate Charge (Qg@Vgs) 76nC@0~10V
- Drain Source Voltage (Vdss) 120V
- Input Capacitance (Ciss@Vds) 4.99nF@60V
- Continuous Drain Current (Id) 100A
- Gate Threshold Voltage (Vgs(th)@Id) 3V@130uA
- Reverse Transfer Capacitance (Crss@Vds) 31pF@60V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 6.5mΩ@10V,100A
- Package TO-262
- Manufacturer Infineon Technologies
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