فروشنده های IPP048N04N G
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مشخصات IPP048N04N G
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPP048N04N G
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 79W
- Total Gate Charge (Qg@Vgs) 31nC@0~10V
- Drain Source Voltage (Vdss) 40V
- Input Capacitance (Ciss@Vds) 2.5nF@20V
- Continuous Drain Current (Id) 70A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@200uA
- Reverse Transfer Capacitance (Crss@Vds) 27pF@20V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 4mΩ@10V,70A
- Package TO-220-3
- Manufacturer Infineon Technologies
فروشنده های IPP048N04N G
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