VBsemi Elec FQU13N10-VB
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| Manufacturer | --- |
| Package | --- |
| Datasheet | FQU13N10-VB |
| Description | --- |
sellers VBsemi Elec FQU13N10-VB
مشخصات
- Number 1 N-channel
- RDS(on) -
- Gate Charge(Qg) 20nC
- Ciss-Input Capacitance 892pF
- Pd - Power Dissipation 61W
- Drain to Source Voltage 100V
- Operating Temperature - -55℃~+175℃
- Current - Continuous Drain(Id) 15A
- Gate Threshold Voltage (Vgs(th)) 1V
- Reverse Transfer Capacitance (Crss@Vds) 70pF
- Package TO-251