IPD26N06S2L-35-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | IPD26N06S2L-35-VB |
| Description | --- |
sellers IPD26N06S2L-35-VB
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec IPD26N06S2L-35-VB
- Power Dissipation (Pd) -
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) 35A
- Gate Threshold Voltage (Vgs(th)@Id) -
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 25mΩ@10V,35A
- Package TO-252
- Manufacturer VBsemi Elec