sellers MMDT3052DW 5G
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet CBI MMDT3052DW 5G
- Transistor Type 2 NPN
- Operating Temperature +125°C@(Tj)
- Collector Current (Ic) 200mA
- Power Dissipation (Pd) 150mW
- Transition Frequency (fT) 200MHz
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@100mA,10mA
- Package SOT-363
- Manufacturer CBI
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