2SA1162-Y,LF
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| Manufacturer | TOSHIBA |
| Package | --- |
| Datasheet | 2SA1162-Y,LF |
| Description | --- |
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Specifications 2SA1162-Y,LF
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet TOSHIBA 2SA1162-Y,LF
- Transistor Type PNP
- Operating Temperature +125°C@(Tj)
- Collector Current (Ic) 150mA
- Power Dissipation (Pd) 150mW
- Transition Frequency (fT) 80MHz
- DC Current Gain (hFE@Ic,Vce) 120@2mA,6V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 100mV@100mA,10mA
- Package SOT-23
- Manufacturer TOSHIBA
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