MMUN2211LT3G
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| Manufacturer | onsemi |
| Package | --- |
| Datasheet | MMUN2211LT3G |
| Description | --- |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet onsemi MMUN2211LT3G
- Transistor Type 1 NPN - Pre Biased
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 246mW
- DC Current Gain (hFE@Ic,Vce) 35@5mA,10V
- Collector Cut-Off Current (Icbo) 500nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@300uA,10mA
- Package SOT-23(TO-236)
- Manufacturer onsemi