LBC817-25LT1G
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| Manufacturer | LRC |
| Package | --- |
| Datasheet | LBC817-25LT1G |
| Description | --- |
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Specifications LBC817-25LT1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet LRC LBC817-25LT1G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 500mA
- Power Dissipation (Pd) 225mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 160@100mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 700mV@500mA,50mA
- Package SOT-23
- Manufacturer LRC
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