IRF9Z34NSTRLPBF
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IRF9Z34NSTRLPBF |
| Description | --- |
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تغییرات قیمت
مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IRF9Z34NSTRLPBF
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 3.8W;68W
- Total Gate Charge (Qg@Vgs) 35nC@10V
- Drain Source Voltage (Vdss) 55V
- Input Capacitance (Ciss@Vds) 620pF@25V
- Continuous Drain Current (Id) 19A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 100mΩ@10V,10A
- Package TO-263
- Manufacturer Infineon Technologies