HXY MOSFET 5N50
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sellers HXY MOSFET 5N50
مشخصات
- Number 1 N-channel
- RDS(on) 1.45Ω
- Gate Charge(Qg) 12.6nC
- Ciss-Input Capacitance 584pF
- Pd - Power Dissipation 75W
- Drain to Source Voltage 500V
- Operating Temperature - -45℃~+125℃
- Current - Continuous Drain(Id) 5A
- Gate Threshold Voltage (Vgs(th)) 4V
- Reverse Transfer Capacitance (Crss@Vds) 4pF
- Package TO-252-2L