FDMS86300
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| Manufacturer | onsemi |
| Package | 8-PowerTDFN |
| Datasheet | FDMS86300 |
| Description | --- |
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مشخصات FDMS86300
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDMS86300
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;104W
- Total Gate Charge (Qg@Vgs) 86nC@10V
- Drain Source Voltage (Vdss) 80V
- Input Capacitance (Ciss@Vds) 7082pF@40V
- Continuous Drain Current (Id) 19A;80A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 3.9mΩ@19A,10V
- Package PQFN-8
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 19A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 7082pF @ 40V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 104W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package 8-PQFN (5x6)
- Package / Case 8-PowerTDFN
- Base Part Number FDMS86
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