HUF75645P3

HUF75645P3

HUF75645P3

در 4 فروشگاه

مشخصات فنی:
ManufacturerON Semiconductor
PackageTO-220-3
Datasheet HUF75645P3, HUF75645S3S
Description N-Channel 100V 75A (Tc) 310W (Tc) Through Hole TO-220-3
تغییرات قیمت
مشخصات
  • Manufacturer ON Semiconductor
  • Series UltraFET™
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25°C 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 14mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 238nC @ 20V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 3790pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 310W (Tc)
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220-3
  • Package / Case TO-220-3
  • Base Part Number HUF75
  • detail N-Channel 100V 75A (Tc) 310W (Tc) Through Hole TO-220-3
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