2N5088
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Description | Bipolar (BJT) Transistor NPN 30V 50mA 50MHz 625mW Through Hole TO-92-3 |
مقالات مرتبط در سیسوگ
مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Obsolete
- Transistor Type NPN
- Current - Collector (Ic) (Max) 50mA
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100µA, 5V
- Power - Max 625mW
- Frequency - Transition 50MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package TO-92-3
- Base Part Number 2N5088
- detail Bipolar (BJT) Transistor NPN 30V 50mA 50MHz 625mW Through Hole TO-92-3
