IXFK36N60
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| Manufacturer | IXYS |
| Package | TO-264-3, TO-264AA |
| Datasheet | IXF(K,N)3(2,6)N60 |
| Description | --- |
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IXFK36N60 | Not Available No price |
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Specifications IXFK36N60
- Manufacturer IXYS
- Series HiPerFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 180mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs 325nC @ 25V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
- FET Feature -
- Power Dissipation (Max) 500W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-264AA (IXFK)
- Package / Case TO-264-3, TO-264AA
Sellers
| Price | ||||
|
|
IXFK36N60 | Not Available No price |
Online shopping
Last shop price change: |