SS8050DBU
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | SS8050 |
| Description | Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 1W Through Hole TO-92-3 |
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مشخصات SS8050DBU
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi SS8050DBU
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1.5A
- Power Dissipation (Pd) 1W
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 160@100mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@800mA,80mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 1.5A
- Voltage - Collector Emitter Breakdown (Max) 25V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
- Power - Max 1W
- Frequency - Transition 100MHz
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package TO-92-3
- Base Part Number SS8050
- detail Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 1W Through Hole TO-92-3
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