APT34N80B2C3G
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| Manufacturer | Microchip Technology |
| Package | TO-247-3 Variant |
| Datasheet | APT34N80(B2,L)C3 |
| Description | N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2] |
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مشخصات
- Manufacturer Microchip Technology
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 145mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs 355nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4510pF @ 25V
- FET Feature -
- Power Dissipation (Max) 417W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package T-MAX™ [B2]
- Package / Case TO-247-3 Variant
- detail N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2]
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