规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi BS170
- Power Dissipation (Pd) 830mW
- Drain Source Voltage (Vdss) 60V
- Continuous Drain Current (Id) 500mA
- Gate Threshold Voltage (Vgs(th)@Id) 3V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 5Ω@10V,200mA
- Package TO-92-3
- Manufacturer onsemi
