规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. SS8550 Y2
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1.5A
- Power Dissipation (Pd) 300mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 200@100mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@800mA,80mA
- Package SOT-23
- Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.