2SC5824T100R
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| Manufacturer | ROHM Semicon |
| Package | --- |
| Datasheet | 2SC5824T100R |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet ROHM Semicon 2SC5824T100R
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 3A
- Power Dissipation (Pd) 2W
- Transition Frequency (fT) 200MHz
- DC Current Gain (hFE@Ic,Vce) 180@100mA,2V
- Collector Cut-Off Current (Icbo) 1uA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@2A,200mA
- Package SOT-89
- Manufacturer ROHM Semicon
