价格变化
规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Transistor Type NPN
- Operating Temperature -55°C~+150°C
- Collector Current (Ic) 3A
- Power Dissipation (Pd) 1W
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 400@100mA,2V
- Collector Cut-Off Current (Icbo) 0.6uA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 0.5V@2A,100mA
- Package TO-252
- Manufacturer Shikues
