SI4410DY,518
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| Manufacturer | NXP USA Inc. |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Datasheet | SI4410DY |
| Description | N-Channel 30V 2.5W (Ta) Surface Mount 8-SO |
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规格
- Manufacturer NXP USA Inc.
- Series TrenchMOS™
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C -
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 13.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-SO
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Base Part Number SI4
- detail N-Channel 30V 2.5W (Ta) Surface Mount 8-SO
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