S8550
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| Manufacturer | WEIDA |
| Package | --- |
| Datasheet | S8550 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet WEIDA S8550
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 1.5A
- Power Dissipation (Pd) 1W
- Transition Frequency (fT) 100MHz
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@800mA,80mA
- Package TO-92-3
- Manufacturer WEIDA
- DC Current Gain (hFE@Ic,Vce) 120@50mA,1V
- Part id 1292296
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